ORGANIC-INORGANIC HYBRID MATERIAL AND METHOD FOR SILICON SURFACE PASSIVATION

Image of a composite 125nm thick layer on a n-Si substrate

Image of a composite 125nm thick layer on a n-Si substrate

RESUMEN

This invention relates to a method for fabrication of a composite layer containing an organic conductor and semiconducting nanostructures (nanoparticles and/or nanowires) as electronic passivation layer of the silicon surface in applications such as solar cells and other silicon-based devices.

SECTOR DE LA TÉCNICA

This invention belongs to the technical field of semiconducting devices and functional coatings.

INVENTORES

Ana Cremades Rodriguez
Chaun You Chang  
David Maestre Varea
Erik Stensrud Marstein
Cristian Vasquez Villanueva Geraldo
Halvard Haug
Jose Maria Gonsalez Clabet
Julio Ramirez Castellano  
Maria Taeno Gonzalez  
Miguel Garcia Tecedor  
Smagul Karazhanov  

TITULARES

Universidad Complutense de Madrid
Inst Energiteknik

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